发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
In a semiconductor power device such as a power MOSFET having a super-junction structure in each of an active cell region and a chip peripheral region, an outer end of a surface region of a second conductivity type coupled to a main junction of the second conductivity type in a surface of a drift region of a first conductivity type and having a concentration lower than that of the main junction is located in a middle region between an outer end of the main junction and an outer end of the super-junction structure in the chip peripheral region. |
申请公布号 |
US2015155378(A1) |
申请公布日期 |
2015.06.04 |
申请号 |
US201514622163 |
申请日期 |
2015.02.13 |
申请人 |
Renesas Electronics Corporation |
发明人 |
TAMAKI Tomohiro;NAKAZAWA Yoshito |
分类号 |
H01L29/78;H01L29/40;H01L29/06 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Kawasaki-shi JP |