| 发明名称 |
MANUFACTURING METHOD OF LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR |
| 摘要 |
A manufacturing method of a low temperature polycrystalline silicon thin film and a manufacturing method of a thin film transistor are provided. The manufacturing method of the low temperature polycrystalline silicon thin film comprises: forming an amorphous silicon thin film on a substrate; and performing a rapid thermal annealing (RTA) process on the amorphous silicon thin film for several times at a predetermined temperature to form the low temperature polycrystalline silicon thin film, wherein the predetermined temperature is lower than a conventional RTA crystallization temperature. |
| 申请公布号 |
US2015155369(A1) |
申请公布日期 |
2015.06.04 |
| 申请号 |
US201314355137 |
申请日期 |
2013.06.06 |
| 申请人 |
Zhang Huijuan |
发明人 |
Zhang Huijuan |
| 分类号 |
H01L29/66;H01L21/324;H01L21/265;H01L21/02 |
主分类号 |
H01L29/66 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A manufacturing method of a low temperature polycrystalline silicon thin film, comprising:
forming an amorphous silicon thin film on a substrate; and performing a rapid thermal annealing (RTA) process on the amorphous silicon thin film for several times at a predetermined temperature to form the low temperature polycrystalline silicon thin film, wherein the predetermined temperature is lower than a conventional RTA crystallization temperature. |
| 地址 |
Beijing CN |
