| 发明名称 |
SEMICONDUCTOR DIE HAVING IMPROVED THERMAL PERFORMANCE |
| 摘要 |
A semiconductor die having improved thermal performance is disclosed. The semiconductor die includes a substrate having a device layer with a plurality of vias that pass through the substrate and the device layer, wherein individual ones of the plurality of vias have an open space volume of less than around about 70,000 cubic micrometers to around about 20,000 cubic micrometers. In at least one embodiment, the substrate of the semiconductor die is made of silicon carbide (SiC) and the device layer is made of gallium nitride (GaN). |
| 申请公布号 |
US2015155222(A1) |
申请公布日期 |
2015.06.04 |
| 申请号 |
US201414557940 |
申请日期 |
2014.12.02 |
| 申请人 |
RF Micro Devices, Inc. |
发明人 |
Shealy Jeffrey Blanton;LeFevre Michael Dyke;Trabert Brian Allen;Burns Christopher Thomas;Fresina Michael Thomas;Vetury Ramakrishna |
| 分类号 |
H01L23/48;H01L21/306;H01L29/20;H01L21/768 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor die having improved thermal performance comprising a substrate having a device layer with a plurality of vias that pass through the substrate and the device layer, wherein individual ones of the plurality of vias have an open space volume of between less than around about 70,000 cubic micrometers and to around about 20,000 cubic micrometers. |
| 地址 |
Greensboro NC US |
