发明名称 POLARITY CONTROL FOR REMOTE PLASMA
摘要 Methods of controlling the polarity of capacitive plasma power applied to a remote plasma are described. Rather than applying a plasma power which involves both a positive and negative voltage swings equally, a capacitive plasma power is applied which favors either positive or negative voltage swings in order to select desirable process attributes. For example, the plasma power may be formed by applying a unipolar oscillating voltage between an electrode and a perforated plate. The unipolar oscillating voltage may have only positive or only negative voltages between the electrode and the perforated plate. The unipolar oscillating voltage may cross electrical ground in some portion of its oscillating voltage.
申请公布号 US2015155189(A1) 申请公布日期 2015.06.04
申请号 US201414230237 申请日期 2014.03.31
申请人 Applied Materials, Inc. 发明人 Cho Tae Seung;Sen Yi-Heng;Park Soonam;Lubomirsky Dmitry
分类号 H01L21/67;H01L21/3065 主分类号 H01L21/67
代理机构 代理人
主权项 1. A method of processing a substrate, the method comprising: transferring the substrate into a substrate processing region of a substrate processing chamber; applying a unipolar oscillating voltage between an electrode and a perforated plate, wherein the unipolar oscillating voltage, on average, biases the perforated plate at a positive voltage relative to the electrode; forming a remote plasma between the electrode and the perforated plate to form plasma effluents; flowing the plasma effluents into the substrate processing region housing the substrate, wherein the plasma effluents flow into the substrate processing region through perforations in the perforated plate; and reacting the plasma effluents with the substrate.
地址 Santa Clara CA US