| 发明名称 |
METHOD FOR REMOVING A POLYSILICON PROTECTION LAYER ON A BACK FACE OF AN IGBT HAVING A FIELD STOP STRUCTURE |
| 摘要 |
Disclosed is a method for removing a polysilicon protection layer (12) on a back face of an IGBT having a field stop structure (10). The method comprises thermally oxidizing the polysilicon protection layer (12) on the back face of the IGBT until the oxidation is terminated on a gate oxide layer (11) located above the polysilicon protection layer (12) to form a silicon dioxide layer (13), and removing the formed silicon dioxide layer (13) and the gate oxide layer (11) by a dry etching process. The method for removing the protection layer is easier to control. |
| 申请公布号 |
US2015155182(A1) |
申请公布日期 |
2015.06.04 |
| 申请号 |
US201314411978 |
申请日期 |
2013.07.25 |
| 申请人 |
CSMC TECHNOLOGIES FAB1 CO., LTD. |
发明人 |
Rui Qiang;Zhang Shuo;Wang Genyi;Deng Xiaoshe |
| 分类号 |
H01L21/311;H01L29/66 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for removing a polysilicon protection layer on a back face of an IGBT having a field stop structure, comprising:
thermally oxidizing the polysilicon protection layer on the back face of the IGBT until the oxidation is terminated on a gate oxide layer located above the polysilicon protection layer to form a SiO2 layer; and removing the formed SiO2 layer and the gate oxide layer by a dry etching process. |
| 地址 |
Jiangsu CN |
