发明名称 |
Apparatus and Method for Laser Heating and Ion Implantation |
摘要 |
An apparatus and method for performing ion implantation while minimizing and/or repairing amorphization of the substrate material. The process comprises exposing a substrate to an ion beam and either concurrently or promptly following the ion implantation using a laser to anneal the surface. In addition, a laser may be utilized to preheat the substrate prior to ion implantation. The laser heats the substrate to a temperature that does not cause the resist layer to be damaged. By utilizing a laser to heat the substrate from the top surface the resist is not damaged allowing for the use of photo resist material. |
申请公布号 |
US2015155172(A1) |
申请公布日期 |
2015.06.04 |
申请号 |
US201314094819 |
申请日期 |
2013.12.03 |
申请人 |
International Business Machines Corporation |
发明人 |
Breil Nicolas |
分类号 |
H01L21/265;H01L21/268 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
1. An apparatus comprising:
an ion implanter for producing an ion beam adapted to implant a substrate; and a laser adapted to anneal the substrate; wherein the laser is adapted to heat an area of the substrate within a predetermined period of time after an ion implanter implants the area. |
地址 |
Armonk NY US |