发明名称 Apparatus and Method for Laser Heating and Ion Implantation
摘要 An apparatus and method for performing ion implantation while minimizing and/or repairing amorphization of the substrate material. The process comprises exposing a substrate to an ion beam and either concurrently or promptly following the ion implantation using a laser to anneal the surface. In addition, a laser may be utilized to preheat the substrate prior to ion implantation. The laser heats the substrate to a temperature that does not cause the resist layer to be damaged. By utilizing a laser to heat the substrate from the top surface the resist is not damaged allowing for the use of photo resist material.
申请公布号 US2015155172(A1) 申请公布日期 2015.06.04
申请号 US201314094819 申请日期 2013.12.03
申请人 International Business Machines Corporation 发明人 Breil Nicolas
分类号 H01L21/265;H01L21/268 主分类号 H01L21/265
代理机构 代理人
主权项 1. An apparatus comprising: an ion implanter for producing an ion beam adapted to implant a substrate; and a laser adapted to anneal the substrate; wherein the laser is adapted to heat an area of the substrate within a predetermined period of time after an ion implanter implants the area.
地址 Armonk NY US