UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

摘要

Disclosed are a UV light emitting diode and a manufacturing method thereof. The light emitting diode includes an active region between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer. The active region includes a plurality of barriers containing Al, a plurality of well layers which are alternatively arranged with the barrier layers and contain Al, and at least one conditioning layer. Each conditioning layer is located between the well layer and the barrier layer near the well layer and is composed of two-component nitride semiconductor. The stress of the active region is reduced by adopting the conditioning layer. Also, the compositions of the well layer and the barrier layer are uniformly controlled.