DEPOSITION USING PLASMA ENHANCED VAPOR PHASE METHOD

摘要

The present invention relates to plasma enhanced vapor phase deposition. A plasma enhanced vapor phase deposition apparatus according to an embodiment of the present invention comprises: a process chamber having a first space and a second space connected to each other; a substrate holder provided in the first space to support a substrate on which a variable resistor material layer is to be formed; a plasma generation device mounted on the process chamber to induce a plasma in the second space; an ion species screening member to filter ion species of the plasma dispersing from the second space to the first space; a first gas supply unit to pulse supply a first process gas including a precursor gas including a component element of the variable resistor material layer to the first space; a second gas supply unit to supply a second process gas including a reactive gas for oxidizing or reducing the variable resistor material layer or the precursor gas to the second space; and a gas emission unit mounted on the process chamber to induce a gas flow from the second space to the first space.