METHOD OF TREATING A SURFACE, METHOD OF FABRICATING A SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE SO FABRICATED

摘要

The present invention provides a method for treating a surface, a method for manufacturing a semiconductor using the same, and a semiconductor device manufactured thereby. In the method for treating the surface, the roughness of the surface is improved by transmitting only the heat on the surface of the substrate instead of the whole substrate by treating the surface of the substrate using the plasma of inert gas at a low temperature of 700 degrees centigrade or less.