| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting element using a nitride semiconductor, which achieves excellent luminous efficiency by concurrently causing a negative electrode to serve functions of low contact resistance and light reflection.SOLUTION: An n-type negative electrode formation method comprises the steps of: sectioning an n-type layer surface into a first region closer to a mesa structure and a second region other than the first region, which has a wider area than the first region and forming a first metal electrode layer of Ti and the like in the first region; subsequently forming a second metal electrode layer of Ti and the like in the second region and on the first metal electrode layer; subsequently forming a reflection electrode layer and a noble metal layer on the second metal electrode layer; performing a heat treatment at a temperature of not less than 400°C and not more than 1000°C after forming the noble metal layer; and performing a heat treatment at a temperature of not less than 800°C and not more than 1200°C after forming the first metal electrode layer and before forming the reflection electrode layer. |
