发明名称 ETCHED TRENCHES IN BOND MATERIALS FOR DIE SINGULATION, AND ASSOCIATED SYSTEMS AND METHODS
摘要 Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.
申请公布号 US2015155452(A1) 申请公布日期 2015.06.04
申请号 US201514617668 申请日期 2015.02.09
申请人 Micron Technology, Inc. 发明人 Odnoblyudov Vladimir;Schellhammer Scott D.;Frei Jeremy S.
分类号 H01L33/52;H01S5/02;H01L51/52;H01L33/62;H01L51/56 主分类号 H01L33/52
代理机构 代理人
主权项 1. A method of processing dies, comprising: forming a plurality of trenches by etching through a bond material forming a bond between a carrier substrate and a plurality of the dies; and singulating the carrier substrate along the trenches to separate the dies.
地址 Boise ID US