METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method includes a step of forming a side wall spacer covering a side surface of a gate electrode of a transistor by etching a first insulator film, and a step of forming a second insulator film covering an upper surface of the gate electrode, the side wall spacer and a source/drain region. The second insulator film is a multilayer film including a silicon oxide layer and a silicon nitride layer. The second step includes forming the silicon oxide layer by thermal CVD so as to come in contact with the side wall spacers, and forming the silicon nitride layer by plasma CVD so as to come in contact with the silicon oxide layer of the second insulator film.

主权项

1. A method for manufacturing a semiconductor device including an insulated-gate field-effect transistor, the method comprising:
a first step of forming a side wall spacer covering a side surface of a gate electrode of the transistor by forming a first insulator film covering an upper and a side surface of the gate electrode and a source/drain region of the transistor, and etching the first insulator film; a second step of forming a silicide layer on the source/drain region; and a third step of forming a second insulator film including a silicon oxide layer and a silicon nitride layer so as to cover the side wall spacer and the silicide layer, wherein the third step includes forming the silicon oxide layer by thermal CVD so as to come in contact with the side wall spacers, and forming the silicon nitride layer by plasma CVD so as to come in contact with the silicon oxide layer.