METHOD AND APPARATUS FOR LASER PROCESSING OF SILICON BY FILAMENTATION OF BURST ULTRAFAST LASER PULSES

摘要

A method for laser processing of Silicon includes placing a Kerr material into engagement with the Silicon forming an interface therebetween. A laser beam is applied having at least one subpulse in a burst envelope operating at a first wavelength. The laser beam passes through a distributive lens focusing assembly and to the Kerr material. The first wavelength is modified to a plurality of second wavelengths, some of which are effective for processing Silicon. Photoacoustic compression processing is produced by the laser pulse energy by a portion of second wavelengths delivered through the interface and to the Silcon which initiates Kerr Effect self focusing which is propagated in the Silicon by additional energy input to the Silicon thus producing a filament within the Silicon.

主权项

1. A method for laser processing of Silicon, comprising the steps of:
providing a Silicon substrate, said Silicon substrate includes a top surface; providing a Kerr material and placing said Kerr material into engagement with said top surface of said Silicon substrate forming an interface therebetween; applying a laser beam having at least one subpulse in a burst envelope, said burst envelope includes 1-50 subpulses, said subpulses in said envelope operating at a first wavelength, from a laser source through a distributive lens focusing assembly and to said Kerr material; and, modifying said first wavelength of said subpulses as said subpulses travel through said Kerr material such that said subpulses are emitted from Kerr material at said interface between said Kerr material and said top surface of said Silicon substrate at a plurality of second wavelengths, said plurality of second wavelengths being white light; a portion of said plurality of said second wavelengths of said subpulses being greater than or equal to 1.3 μm; photoacoustic compression processing is produced by said portion of said plurality of said second wavelengths being greater than or equal to 1.3 μm delivered through said interface and to said Silcon substrate which initiates Kerr Effect self focusing which is propagated in said Silicon substrate by additional energy input to said Silicon thus producing a filament within said Silicon substrate.