| 摘要 |
Produced is a semiconductor device (1) which comprises: an SiC epitaxial layer (28); a plurality of transistor cells (18) which are formed in the SiC epitaxial layer (28) and are ON/OFF controlled by a predetermined control voltage; a gate electrode (19) that faces a channel region (32) of each transistor cell (18), in said channel region (32) a channel is formed when the transistor cell (18) is in an ON state; a gate metal (44) that is exposed in the outermost surface for electrical connection to the outside and is electrically connected to the gate electrode (19), while being physically separated from the gate electrode (19); and a built-in resistor (21) that is formed of a polysilicon and is arranged below the gate metal (44) so as to electrically connect the gate metal (44) and the gate electrode (19) with each other. |
