MAGNETIC MEMORY DEVICES INCLUDING SHARED LINES

摘要

A magnetic memory device includes word lines, bit lines intersecting the word lines, magnetic memory elements disposed at intersections between the word lines and the bit lines, and selection transistors connected to the word lines. The magnetic memory elements share a word line among the plurality of word lines and also share a selection transistor connected to the word line that is shared among the selection transistors. Related systems and operating methods are also described.

主权项

1. A magnetic memory device, comprising:
a plurality of word lines; a plurality of bit lines intersecting the word lines; a plurality of magnetic memory elements, a respective one of which is disposed at a respective intersection between the plurality of word lines and the plurality of bit lines; and a plurality of selection transistors, a respective one of which is connected to a respective one of the plurality of word lines, wherein the plurality of magnetic memory elements sharing a word line among the plurality of word lines also share a selection transistor connected to the word line that is shared among the plurality of selection transistors.