发明名称 ULTRASONIC TRANSDUCER DEVICE, ULTRASONIC MEASUREMENT APPARATUS, AND ULTRASONIC IMAGING APPARATUS
摘要 An ultrasonic transducer device includes a substrate in which a first opening and a second opening are provided, a first ultrasonic transducer element that is formed on the substrate in correspondence with the first opening, and a second ultrasonic transducer element that is formed on the substrate in correspondence with the second opening. The first opening has a first edge portion on a first direction side and a second edge portion on a second direction side, the first direction corresponding to a scan direction and the second direction being in the opposite direction to the first direction. Also, the first ultrasonic transducer element includes a first vibrating film that blocks the first opening, and a first piezoelectric layer that is provided on the first vibrating film so as to cover the first edge portion of the first opening in plan view from a thickness direction of the substrate.
申请公布号 US2015151330(A1) 申请公布日期 2015.06.04
申请号 US201414546403 申请日期 2014.11.18
申请人 SEIKO EPSON CORPORATION 发明人 TSURUNO Jiro
分类号 B06B1/06;G01N29/44;G01N29/06 主分类号 B06B1/06
代理机构 代理人
主权项 1. An ultrasonic transducer device comprising: a substrate in which a first opening and a second opening are provided; a first ultrasonic transducer element that is formed on the substrate in correspondence with the first opening; and a second ultrasonic transducer element that is formed on the substrate in correspondence with the second opening; wherein the first opening has a first edge portion on a first direction side and a second edge portion on a second direction side, the first direction corresponding to a scan direction and the second direction being in the opposite direction to the first direction, and the first ultrasonic transducer element includes: a first vibrating film that blocks the first opening; and a first piezoelectric layer that is provided on the first vibrating film so as to cover the first edge portion of the first opening in plan view from a thickness direction of the substrate.
地址 Tokyo JP