| 摘要 |
<p>A method of making a semiconductor device comprises: providing a semiconductor wafer having a semiconductor layer; forming a first mask layer over the semiconductor layer; forming a metal second mask layer over the first mask layer; annealing the second mask layer to form islands; forming a second metal layer over the islands; annealing the second metal layer thereby to increase the size of the islands; and etching through the first mask layer and the semiconductor layer using the islands as a mask to form an array of pillars.</p> |
