| 摘要 |
PROBLEM TO BE SOLVED: To store electric charge overflowing from floating diffusion in a storage capacitance element to secure a dynamic range of a CMOS image sensor, and to increase a pixel area by forming the storage capacitance element by a MOS capacitor.SOLUTION: An imaging apparatus includes a plurality of pixel circuits (PC1) arrayed in a row direction and a column direction and a plurality of storage capacitance lines (SCL(x)) extended in the column direction and arrayed in the row direction. Each of the storage capacitance lines is connected to a plurality of pixel circuits arrayed in the same row. Each of the pixel elements includes: a first photoelectric conversion element (PD1) for receiving light and storing generated electric charge; floating diffusion (CFD) to which electric charge stored in the first photoelectric conversion element is transferred; and a first switch transistor (MTX1) for connecting the floating diffusion and the storage capacitance line. |
