| 摘要 |
<p>Provided is a method for manufacturing a light emitting diode using a porous structure layer. Specifically, the present invention can manufacture the light emitting diode characterized by comprising: a step of forming the porous structure layer on a substrate; a step of forming a light emitting laminated body including, in turn, a second n-GaN layer, an activating layer, and a p-GaN layer, on the porous structure layer; and a step of separating the substrate from the light emitting laminated body by etching the porous structure layer. The porous structure layer comprises a nanoporous GaN layer formed by n-type dopant etching of an undoped GaN layer, a sacrificial pattern layer, and a preliminary n-GaN layer. The substrate separation process can be easily performed at the time of manufacturing the light emitting diode by separating the substrate using the porous structure layer. In addition, damage to the light emitting laminated body is reduced through the etching of the porous structure layer, thereby improving the manufacture process yield, and light output of the light emitting diode to which the manufacture process yield is applied.</p> |
