SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve the performance of a semiconductor device.SOLUTION: A plurality of unit LDMOSFETs 10a are formed on a semiconductor substrate SUB. Source regions of the plurality of unit LDMOSFETs 10a are electrically connected to each other via a source wiring M1S and a source wiring M2S. Gate electrodes GE of the plurality of unit LDMOSFETs 10a are electrically connected to each other via a gate wiring MIG and electrically connected to a gate wiring in the same layer as the source wiring M2S via the gate wiring M1G. Drain regions of the plurality of unit LDMOSFETs 10a are electrically connected to each other by being electrically connected to a back electrode BE via a conductive plug TL embedded into a trench TR of the semiconductor substrate SUB. Each thickness of the source wiring M1S and the gate wiring M1G is smaller than the thickness of the source wiring M2S. The gate wiring M1G is extended above the plug TL.