| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor capable of suppressing generation of dielectric breakdown. ! SOLUTION: A field-effect transistor comprises: a source electrode including a plurality of source fingers and a coupling part to which one ends of the source fingers are coupled; a drain electrode including a plurality of drain fingers and a coupling part to which one ends of the drain fingers are coupled, and in which the source fingers and the drain fingers are alternately provided; a gate electrode including a plurality of gate fingers provided between the source fingers and the drain fingers, and a coupling part to which one ends of the gate fingers are coupled; an insulating film covering the source electrode, the drain electrode, and the gate electrode; and a source pad electrode, a drain pad electrode, and a gate pad electrode provided on the insulating film. A drain pad electrode connection part electrically connecting between the drain electrode and the drain pad electrode, and |
