| 摘要 |
A semiconductor substrate (SUB) having recessed sections (CP1) and recessed sections (CP2), on a main surface. n+ source regions (SR) and an n+ drain region (DR) sandwich the recessed sections (CP1) and the recessed sections (CP2) in the main surface. A p- epitaxial region (EP) and p-type well regions (WL), which become channel-forming regions, are formed in the main surface between the n+ source regions (SR) and the recessed sections (CP1). Gate electrode layers (GE) are formed upon the channel areas, sandwiching a gate insulation film (GI) therebetween, and extend on top of element-separating insulation films (SI) inside the recessed sections (CP1). The recessed sections (CP1) and the recessed sections (CP2) are arranged adjacent to each other, having a substrate protruding section (CV) that protrudes further on the main surface side than the floor of each of the recessed sections (CP1, CP2), interposed therebetween. |
