发明名称 |
METHOD OF FABRICATING AND OPERATING AN OPTICAL MODULATOR |
摘要 |
A semiconductor device comprising a substrate; a monolithic gain region disposed on the substrate and operable to produce optical gain in response to current injection, including a first electrode over a first portion of the gain region having a first length L1, with a first current I1 being applied; and a second electrode over a second portion of the gain region having a second length L2, with a second current I2 being applied; wherein I1/L1 is greater than I2/L2. |
申请公布号 |
US2015155683(A1) |
申请公布日期 |
2015.06.04 |
申请号 |
US201514620010 |
申请日期 |
2015.02.11 |
申请人 |
Emcore Corporation |
发明人 |
Blauvelt Henry A.;He Xiaoguang;Vahala Kerry |
分类号 |
H01S5/00;H01S5/042;H01S5/026;H01S5/50;H01S5/343;H01S5/20;G02F1/017;H01S5/10 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a substrate; a monolithic gain region forming a first semiconductor region disposed on the substrate and operable to produce optical gain in response to current injection, including an optical waveguide layer extending from a first end of the substrate to a second end of the substrate opposite to the first end, the optical waveguide layer including an active layer formed on the upper surface of the substrate; a reflective mirror provided at one end of the optical waveguide layer, and an exit aperture on the other end of the optical waveguide layer for emitting optical energy; a first electrode over a first portion of the gain region having a first length L1, with a first current I1 being applied; a second electrode over a second portion of the gain region having a second length L2, with a second current I2 being applied; and wherein I1/L1 is greater than I2/L2. |
地址 |
Alhambra CA US |