发明名称 SEMICONDUCTOR DEVICE
摘要 This semiconductor device is provided with: a normally off first transistor, a normally on second transistor, and a normally on third transistor. The first transistor and second transistor are cascode connected, and the third transistor is connected in parallel to the second transistor. The off-state breakdown voltages of the second transistor and third transistor are greater than that of the first transistor, and the turn-on time of the third transistor is shorter than the turn-on time of the second transistor.
申请公布号 WO2015079875(A1) 申请公布日期 2015.06.04
申请号 WO2014JP79310 申请日期 2014.11.05
申请人 SHARP KABUSHIKI KAISHA 发明人 INNAMI KOHSUKE;TERAGUCHI NOBUAKI
分类号 H01L21/337;H01L21/338;H01L21/822;H01L21/8232;H01L27/04;H01L27/06;H01L27/095;H01L29/808;H01L29/812 主分类号 H01L21/337
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