SINTERED OXIDE AND SPUTTERING TARGET, AND METHOD FOR PRODUCING SAME

摘要

Provided are a sintered oxide in which the development of cracks during the bonding process can be suppressed, a sputtering target using this sintered oxide, and a method for producing the same. This sintered oxide is obtained by sintering indium oxide, gallium oxide, and tin oxide, wherein: the relative density of the sintered oxide is 90% or higher; the average grain size of the sintered oxide is 10 μm or less; the relations 30 at.% ≤ [In] ≤ 50 at.%, 20 at.% ≤ [Ga] ≤ 30 at.%, and 25 at.% ≤ [Sn] ≤ 45 at.% are satisfied, where [In], [Ga], and [Sn] are the ratios (at.%) of the content of indium, gallium, and tin, respectively, with respect to the total metal elements contained in the sintered oxide; and the InGaO3 phase satisfies the relation [InGaO3] ≥ 0.05.