| 摘要 |
<p>The present invention relates to a memory device and, more specifically, to a memory device which comprises a source and a drain separated and facing on both sides of a channel area; a tunneling insulation film formed on the channel area; a nanoparticle layer formed on the tunneling insulation film; a control gate insulation film formed on the nanoparticle layer; and a control gate formed on the control gate insulation film, wherein the nanoparticle layer includes nanoparticles arranged to be separated from each other, and average diameter of the nanoparticles is 0.5-1.2 nm.</p> |
