RF AMPLIFIER OPERATIONAL IN DIFFERENT POWER MODES

摘要

Embodiments of a radio frequency (RF) amplification are disclosed. The RF amplification device includes a first RF amplification circuit, a second RF amplification circuit, and power control circuitry operable in a first power mode and a second power mode. The first RF amplification circuit has a cascode amplifier stage configured to amplify an RF signal. The cascode amplifier stage has an input transistor and a cascode output transistor that are stacked in cascode. The second RF amplification circuit is configured to amplify the RF signal. The power control circuitry is configured to bias the first cascode output transistor so that the first cascode output transistor operates in a saturation region in the first power mode and bias the first cascode output transistor so that the first cascode output transistor operates in a triode region in the second power mode. The second RF amplification circuit is assisted without introducing additional loading.

主权项

1. A radio frequency (RF) amplification device comprising:
a first RF amplification circuit comprising a cascode amplifier stage configured to amplify an RF signal, wherein the cascode amplifier stage has a first input transistor and a first cascode output transistor that are stacked in cascode; a second RF amplification circuit configured to amplify the RF signal, wherein the second RF amplification circuit is coupled to the cascode amplifier stage between the first input transistor and the first cascode output transistor; power control circuitry operable in a first power mode and a second power mode, wherein the power control circuitry is configured to:
bias the first cascode output transistor so that the first cascode output transistor operates in a saturation region in the first power mode;bias the first cascode output transistor so that the first cascode output transistor operates in a triode region in the second power mode.