| 发明名称 |
NONVOLATILE MEMORY DEVICE AND METHOD OF WRITING DATA IN NONVOLATILE MEMORY DEVICE |
| 摘要 |
A nonvolatile memory device, including a first latch unit and a nonvolatile memory cell, and a method of writing data in a nonvolatile memory device are provided. The method includes receiving a first writing command or a second writing command from outside of the nonvolatile memory device, and writing first data stored in the first latch unit in the nonvolatile memory cell in response to the first or second writing command. The first data is retained in the first latch unit until the writing of the first data stored in the first latch unit in the nonvolatile memory cell is completed. |
| 申请公布号 |
US2015155046(A1) |
申请公布日期 |
2015.06.04 |
| 申请号 |
US201414554128 |
申请日期 |
2014.11.26 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JI-SANG;CHOI KI-HWAN;KWON OH-SUK |
| 分类号 |
G11C16/10;G11C16/34 |
主分类号 |
G11C16/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of writing data in a nonvolatile memory device comprising a first latch unit and a nonvolatile memory cell, the method comprising:
receiving a first writing command or a second writing command from outside of the nonvolatile memory device; and writing first data stored in the first latch unit in the nonvolatile memory cell in response to the first or second writing command, wherein the first data is retained in the first latch unit until the writing of the first data stored in the first latch unit in the nonvolatile memory cell is completed. |
| 地址 |
Suwon-si KR |
