SEMICONDUCTOR DEVICE

摘要

To improve the reliability of a semiconductor device by suppressing separation between an organic insulating film and a metal wiring line caused by a gas. This semiconductor device is provided with: a first metal wiring line (102) that is formed on a semiconductor substrate (100); a first organic insulating film (103) that is formed on the first metal wiring line; and a second metal wiring line (110) that is formed so as to cover the first organic insulating film and has a via (110a) to be connected to the first metal wiring line. This semiconductor device is also provided with a second organic insulating film (112) that is formed on the first organic insulating film and has an opening (112a) from which the second metal wiring line is exposed. This semiconductor device is further provided with: a bump (115) that is formed on a portion of the second metal wiring line, said portion being exposed from the opening; and a tunnel (103a) that is formed along a main surface of the semiconductor substrate so as to be in contact with the second metal wiring line. The tunnel (103a) is formed so as to overlap the second metal wiring line when viewed in plan.