GAN-BASED SCHOTTKY BARRIER DIODE RECTIFIER

摘要

A GaN-based Schottky barrier diode rectifier and a manufacturing method thereof, the GaN-based Schottky barrier diode rectifier comprising: a substrate (100), a GaN intrinsic layer (200) and a barrier layer (300) sequentially grown on the substrate (100); a p-type 2 dimension electron gas (2DEG) depletion layer (501) located on the upper surface of the barrier layer (300), covering a partial area of the upper surface thereof, or being formed to partially or completely lie in the upper surface of the barrier layer (300); a negative electrode (702) separate from the p-type 2DEG depletion layer (501) on the barrier layer (300); a positive electrode comprising electrically connected first portion (711) and second portion (712); the first portion of the positive electrode is located on the upper surface of the p-type 2DEG depletion layer (501); and the second portion of the positive electrode is in contact with the upper surface of the barrier layer (300) not covered by the 2DEG depletion layer (501); and the second portion of the positive electrode and the negative electrode (702) are on the two sides of the 2DEG depletion layer (501) respectively.