| 摘要 |
The present invention relates to an apparatus for growing an epitaxial wafer to grow epitaxial layers depending on the flow of process gas, which comprises: a reactive chamber for providing an area in which process gas moves; an upper liner and a lower liner which surround a side part of the reactive chamber; a susceptor disposed on the center part of the reactive chamber on which the wafer is mounted; a pre-heating ring which is separately disposed on the same plane as the susceptor, and spaced away from the susceptor as mounted on an upper surface of the lower liner; and a fixing member which is formed on a lower part of the pre-heat ring, and is in contact with the side of the lower liner, wherein the fixing member has a protrusion part having a contact surface with the side of the lower liner in a circumferental direction, and the protrusion part is fixed so that the pre-heating ring remains at a certain distance from the susceptor. Therefore, the pre-heating ring mounted on the lower liner is fixated to maintain a certain distance between the pre-heating ring and the susceptor in all directions during a process of growing epitaxial wafers, thus an epitaxial thickness of an edge part of a wafer can be uniformly formed since reactive gas flowing toward the wafer is consistently controlled. |
