| 摘要 |
Provided is an arrays substrate comprising: a substrate in which a plurality of pixel areas are defined; a thin film transistor formed on each pixel area on the substrate, having source and drain electrode separated with a gate electrode and an oxide semiconductor layer, and respectively forming insulation films made of an inorganic insulation material between the oxide semiconductor layer, and the source and drain electrode; a protection layer having a drain contact hole exposing the drain electrode above the thin film transistor; and a first electrode formed to be in contact with the drain electrode of the thin film transistor and the drain contact hole above the protection layer on each pixel area, wherein a first hydrogen absorption layer in which particles consisting of one among nickel (Ni), palladium (Pd), and platinum (Pt) are discontinuously arranged is formed on either a lower surface or an upper surface of at least one insulation film among insulation films or the protection layer. Also, provided is a method for fabricating the same. |
