| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of measuring carbon concentration of a silicon single crystal in which the carbon concentration can be measured even when the silicon single crystal differs in oxygen concentration.SOLUTION: There is provided a method of measuring carbon concentration of a silicon single crystal in which unknown carbon concentration is measured from correlation set by acquiring an intensity division value obtained by dividing intensity of a spectrum of 1,280 nm in wavelength by intensity of a spectrum of 1,570 nm in wavelength and a concentration division value obtained by dividing carbon concentration measured from each silicon single crystal by oxygen concentration with respect to photoluminescence or cathode luminescence due to a composite defect of a silicon single crystal generated by irradiating the silicon single crystal with an electron beam, and oxygen concentration measured from a silicon single crystal for measurement whose carbon concentration is unknown and an intensity division value acquired by irradiating the silicon single crystal for measurement with an electron beam. |
