| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a thin film having high resistance against HF and a low dielectric constant with high productivity.SOLUTION: A semiconductor device manufacturing method comprises a process of forming on a substrate, a thin film including a chemical bond of a predetermined element and carbon and has a borazine ring skeleton by performing under the conditions where the borazine ring skeleton in the borazine compound is held and at least a part of the chemical bond of the predetermined element and carbon in the material gas is held, a cycle predetermined times, which includes: a process of supplying to a substrate, a material gas which contains a predetermined element, carbon and halogen, and has a chemical bond of the predetermined element and carbon; and a process of supplying to the substrate, a reaction gas containing a borazine compound.</p> |
