OPTOELECTRONIC DEVICE STRUCTURE

摘要

The application is related to an optoelectronic device structure including a stress-balancing layer. The optoelectronic device structure comprises a high thermal conductive substrate, a stress-balancing layer on the high thermal conductive substrate, a reflective layer on the stress-balancing layer and an epitaxial structure on the reflective layer.

主权项

1. A method of making an optoelectronic device, comprising:
providing an epitaxial structure having a first surface and a second surface opposite to the first surface; forming a layer on the epitaxial structure, the layer comprising a first portion covering the second surface and a second portion exposing the second surface; and forming a conductive layer on the second portion, the conductive layer having a width narrower than that of the epitaxial structure.