Semiconductor Device

摘要

A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.

主权项

1. A semiconductor device comprising:
a first insulating film; an oxide semiconductor film comprising a channel formation region over the first insulating film; a second insulating film over the oxide semiconductor film and comprising a first opening and a second opening; and a pair of conductive films electrically connected to the oxide semiconductor film respectively through the first opening and the second opening, wherein the second insulating film has a stacked-layer structure including a first film and a second film, and wherein the second insulating film overlaps the channel formation region and an end portion of the oxide semiconductor film.