| 摘要 |
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving. |
| 主权项 |
1. A light-emitting device including a pixel portion, the pixel portion comprising:
a first transistor including a channel formation region, a source region, a drain region, and a gate; a first insulating film over the first transistor; a first wiring over the first insulating film, the first wiring electrically connected to one of the source region and the drain region; a second insulating film over the first wiring; a pixel electrode over and in contact with the second insulating film; and a second wiring over and in contact with the second insulating film, wherein the channel formation region includes a first region, wherein the second wiring includes a second region, wherein the gate includes a third region, and wherein the first region, the second region, and the third region overlap with one another. |
