| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). |
| 申请公布号 |
US2015155313(A1) |
申请公布日期 |
2015.06.04 |
| 申请号 |
US201414546443 |
申请日期 |
2014.11.18 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
Yamazaki Shunpei;Koezuka Junichi;Shima Yukinori;Jintyou Masami;Hamochi Takashi;Higano Satoshi;Hosaka Yasuharu;Obonai Toshimitsu |
| 分类号 |
H01L27/12;H01L29/786;H01L49/02 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
an oxide semiconductor film having conductivity; and a first conductive film in contact with the oxide semiconductor film having conductivity, wherein the first conductive film includes a Cu—X alloy film, wherein X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti, and wherein a hydrogen concentration of the oxide semiconductor film having conductivity is higher than or equal to 8×1019 atoms/cm3. |
| 地址 |
Atsugi-shi JP |
