| 摘要 |
A semiconductor-storage-device manufacturing method of the present invention is a method for manufacturing a semiconductor storage device provided with a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode, and the method includes a step of embedding a first metal plug and a second metal plug in an insulating layer; a step of forming a covering layer that covers at least the second metal plug while securing a part that comes into electric contact with the first metal plug; a step of forming a deposit structure by sequentially depositing a material for the lower electrode, a material for the ferroelectric film, and a material for the upper electrode after forming the covering layer; and a step of forming the ferroelectric capacitor by etching and removing other parts except a part of the deposit structure such that the part of the deposit structure remains on the first metal plug. |
| 主权项 |
1. A semiconductor storage device comprising:
an insulating layer; a ferroelectric capacitor disposed on the insulating layer, the ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode; an interlayer insulating film formed on the insulating layer, the interlayer insulating film having an opening at a part thereof at which the ferroelectric capacitor is disposed; a first metal plug embedded in the insulating layer and connected to the lower electrode via the opening of the interlayer insulating film; a second metal plug embedded in the insulating layer outside the ferroelectric capacitor when viewed planarly; and a hydrogen barrier film partially covering the ferroelectric capacitor and the interlayer insulating film, wherein an upper surface of the interlayer insulating film is in a level that is higher than a level of an upper surface of the first metal plug so that a step is provided between the upper surface of the interlayer insulating film and the upper surface of the first metal plug, the lower electrode is formed continuously on the upper surface of the interlayer insulating film, the upper surface of the first metal plug and the step, and the upper surface of the interlayer insulating film and the upper surface of the first metal plug are interlinked via a curved portion of the interlayer insulating film. |
