发明名称 Reduction of Charging Induced Damage in Photolithography Wet Process
摘要 An approach is developed to use an acidic rinse to reduce charge during the lithographic process, and thereby eliminate the crystalline damage and associated yield loss associated with the accumulated charge. The crystalline damage has been found to occur for certain thicknesses of dielectric layers, and such damage is irreparable. A sparge can be used to dissolve carbon dioxide in water to provide a weak acidic rinse.
申请公布号 US2015155162(A1) 申请公布日期 2015.06.04
申请号 US201314095150 申请日期 2013.12.03
申请人 Spansion LLC 发明人 SUTTON Daniel E.;FOSTER Christopher M.;HIGGINS, SR. Kelley Kyle;KHOGLY Moutasim;BIERWAG Alexander J.;WILCOX Daniel H.
分类号 H01L21/02;H01L49/02 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method comprising: forming a dielectric layer over a substrate, the dielectric layer having a thickness; patterning the dielectric layer, the patterning including using a developer having a pH greater than 7; and applying a weak acidic rinse to the patterned dielectric layer.
地址 Sunnyvale CA US