| 发明名称 |
R-T-B BASED SINTERED MAGNET |
| 摘要 |
The present invention provides an R-T-B based sintered magnet including R2T14B crystal grains wherein; a grain boundary is formed by two or more adjacent R2T14B crystal grains, an R—O—C concentrated part, in which concentrations of R, O and C are higher than those in the R2T14B crystal grains respectively, is in the grain boundary, and an area of the R—O—C concentrated part occupying in that of the grain boundary on a cut surface of the R-T-B based sintered magnet is within a range of 10% or more to 75% or less. |
| 申请公布号 |
US2015155083(A1) |
申请公布日期 |
2015.06.04 |
| 申请号 |
US201314378432 |
申请日期 |
2013.02.13 |
| 申请人 |
Miwa Masashi;Nakajima Haruna;Nishikawa Ken-ichi;Hidaka Tetsuya;Hagiwara Jun;Ishizaka Chikara |
发明人 |
Miwa Masashi;Nakajima Haruna;Nishikawa Ken-ichi;Hidaka Tetsuya;Hagiwara Jun;Ishizaka Chikara |
| 分类号 |
H01F1/057;H01F7/02 |
主分类号 |
H01F1/057 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An R-T-B based sintered magnet comprising R2T14B crystal grains wherein;
a grain boundary is formed by two or more adjacent R2T14B crystal grains, an R—O—C concentrated part, in which concentrations of R, O and C are higher than those in the R2T14B crystal grains respectively, is in the grain boundary, an area of the R—O—C concentrated part occupying in that of the grain boundary on a cut surface of the R-T-B based sintered magnet is within a range of 14% or more to 71% or less, and a ratio (O/R) of O atom to R atom in the R—O—C concentrated part is within a range of 0.41 or more to 0.70 or less. |
| 地址 |
Tokyo JP |
