NANO-STURUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

One embodiment of the present invention provides a nanostructure semiconductor light emitting device which includes a plurality of nano light emitting structures which nano cores which are composed of first conductive semiconductors and active layers and second conductive semiconductors which are successively located on the surface of the nano core, a contact electrode which is arranged on the surface of the second conductive semiconductor layer of the nano light emitting structures and is made of transparent conductive materials, a low refractive index layer which is filled in a space between the nano light emitting structures and has a first refractive index, and a high refractive index layer which is arranged on the low refractive index layer to cover the nano light emitting structures and has a second refractive index which is larger than the first refractive index.