| 摘要 |
PROBLEM TO BE SOLVED: To adjust the implantation beam current in a high energy ion implantation device, for example.SOLUTION: A beam current adjusting device 300 for an ion implantation device includes a variable aperture 302 arranged at the convergent point P of an ion beam, or the vicinity thereof. In order to control the implantation beam current, the variable aperture 302 is configured to adjust the beam width of an ion beam, in a direction perpendicular to the convergent direction thereof, at the convergent point P. The variable aperture 302 may be arranged immediately after a mass spectrometry slit 22b. The beam current adjusting device 300 may be provided in a high energy ion implantation device 100 having a high energy multi-stage linear acceleration unit 14. |
