CHEMICAL MECHANICAL PLANARIZATION USING NANODIAMOND

摘要

A method for chemical mechanical polishing of a substrate includes polishing the substrate at a stock removal rate of greater than about 2.5 Å/min to achieve a Ra of not greater than about 5.0 Å. The substrate can be a III-V substrate or a SiC substrate. The polishing utilizes a chemical mechanical polishing slurry comprising ultra-dispersed diamonds and at least 80 wt % water.

主权项

1. A chemical mechanical polishing slurry for polishing a substrate, comprising:
at least 80 wt % water; ultra dispersed diamond (UDD) dispersed within the water, the UDD being present in an amount of at least 0.01 wt % and not greater than 5 wt % and having an average primary particle size not greater than 10.0 nm, a density of between 2.8 g/cm3 and 3.0 g/cm3 and a surface area between about 200 m2/g to 350 m2/g; a complexing agent in an amount of at least about 500 ppm; and a passivating agent in an amount of at least 50 ppm.