发明名称 Apparatus And Method For Improved Darkspace Gap Design In RF Sputtering Chamber
摘要 Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.
申请公布号 US2015155143(A1) 申请公布日期 2015.06.04
申请号 US201514618416 申请日期 2015.02.10
申请人 Applied Materials, Inc. 发明人 Forster John C.;Tang Xianmin
分类号 H01J37/34;B23K31/02;B23K1/00 主分类号 H01J37/34
代理机构 代理人
主权项 1. A method for manufacturing a target assembly for use in an RF sputtering chamber comprising: providing a backing plate having a back surface, a front peripheral face defining an inner peripheral edge and a recessed area having a shape bounded by the inner peripheral edge; providing a target having substantially the same shape as the recessed area, the target having an inner surface, a sputterable target surface and an outer peripheral edge; and joining the inner surface of the target to the inner peripheral face of the backing plate so that the sputterable target surface is substantially coplanar with the outer peripheral face.
地址 Santa Clara CA US