| 发明名称 |
TRANSPARENT CONDUCTIVE THIN FILM |
| 摘要 |
A transparent conductive thin film and an electronic device including the same are disclosed, the transparent conductive thin film including a titanium nitride or a zirconium nitride having a heterometal element selected from zinc (Zn), gallium (Ga), indium (In), and a combination thereof. |
| 申请公布号 |
US2015155065(A1) |
申请公布日期 |
2015.06.04 |
| 申请号 |
US201414461639 |
申请日期 |
2014.08.18 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
PARK Hyeon Cheol;KIM Kwang Hee;KWAK Chan;SON Yoon Chul;LEE Sang Mock |
| 分类号 |
H01B1/02;C23C14/00;H01B1/06 |
主分类号 |
H01B1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transparent conductive thin film comprising:
at least one of a titanium nitride and a zirconium nitride including a heterometal element selected from zinc (Zn), gallium (Ga), indium (In), and a combination thereof, wherein the at least one of titanium nitride and zirconium nitride is represented by Chemical Formula 1:
A1-xMexNy [Chemical Formula 1] wherein A is titanium (Ti) or zirconium (Zr), Me is zinc (Zn), gallium (Ga), indium (In), or a combination thereof, x is between 0.01 and 0.5, and y is between 0.8 and 1.2. |
| 地址 |
Suwon-si KR |
