| 摘要 |
The present disclosure concerns a magnetic logic unit (MLU) cell comprising: a first magnetic tunnel junction (2) and a second magnetic tunnel junction (2), each magnetic tunnel junction comprising a first magnetic layer (21) having a first magnetization (210), a second magnetic layer (23) having a second magnetization, and a tunnel barrier layer (22) between the first and second layer (21, 23); and a field line (4) for passing a field current (41) such as to generate an external magnetic field (42) adapted to switch the first magnetization (210); the first magnetic layer (21) being arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field (42). The present disclosure also concerns an MLU amplifier (10) comprising a plurality of the MLU cell (1). The MLU amplifier has large gains, extended cut off frequencies and improved linearity. |
