THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF

摘要

A thin film transistor display panel according to one embodiment of the present invention includes an insulation substrate, a gate line which is located on the insulation substrate and includes a gate electrode, a gate insulation layer which is located on the gate line, a semiconductor layer which is located on the gate insulation layer, and a source electrode and a drain electrode which are separately located on the semiconductor layer. The gate insulation layer includes SiOF. The gate electrode, the semiconductor layer, the source electrode, and the drain electrode comprise the thin film transistor. The threshold voltage shift value of the thin film transistor is below about 4.9V.