| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device achieving high read-out speed. <P>SOLUTION: A flash memory 3 comprises: a precharge circuit 45 for precharging a selected bit line BL; a constant current source 50; a current detection type sense amplifier 23; and switching circuits SWT2, SWB2 and SW which connect the selected bit line BL and the constant current source 50 to input nodes LBT and LBB of the sense amplifier 23 respectively when the selected bit line BL belongs to a memory array MA2, the switching circuits SWT2, SWB2 and SW connecting the selected bit line BL and the constant current source 50 to the input nodes LBB and LBT of the sense amplifier 23 respectively when the selected bit line BL belongs to a memory array MA3. Thus, precharge and data read-out of the bit line BL can be concurrently executed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
