发明名称 SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, PRODUCTION METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND DEVICE PRODUCTION METHOD
摘要 In order to correct warpage that occurs in formation of a multilayer film, provided are a single crystal substrate with a multilayer film, a manufacturing method therefor, and an element manufacturing method using the manufacturing method. The single crystal substrate with a multilayer film includes: a single crystal substrate (20); a multilayer film (30) including two or more layers that is formed on one surface of the single crystal substrate (20) and having a compressive stress; and a heat-denatured layer (22) provided, of two regions (20U, 20D) obtained by bisecting the single crystal substrate (20) in the thickness direction thereof, at least in the region (20D) on the side of the surface opposite to the one surface of the single crystal substrate (20) having the multilayer film (30) formed thereon.
申请公布号 EP2544219(A4) 申请公布日期 2015.06.03
申请号 EP20110750812 申请日期 2011.03.04
申请人 NAMIKI SEIMITSU HOUSEKI KABUSHIKIKAISHA;DISCO CORPORATION 发明人 AIDA, HIDEO;AOTA, NATSUKO;HOSHINO, HITOSHI;FURUTA, KENJI;HAMAMOTO, TOMOSABURO;HONJO, KEIJI
分类号 H01L21/20;C30B29/20;C30B33/02;H01L21/02;H01L21/268;H01L23/00;H01L29/04 主分类号 H01L21/20
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